| 摘要 |
A method of applying thin metal sensitizing deposits to the exposed silicon areas of a silicon substrate having areas of exposed silicon and silicon oxide, including the steps of immersing the silicon substrate in a basic, aqueous solution containing a metal salt of the metal to be deposited, particularly a nickel, cobalt, or platinum salt, and thereafter reducing the metal ion of the salt to the elemental metal by use of the exposed silicon as the reducing agent.
|
