发明名称 Semiconductor device
摘要 A method of making hybrid solar cell comprising eutectically forming a vertical multi-junction solar cell having vertical photovoltaic junctions in the form of Schottky barriers and/or PN junctions and comprising a plurality of vertically elongated bodies of a first semiconductor material and a plurality of similarly elongated metal bodies which contact the semiconductor material bodies and space them from each other. All the bodies terminate at a common termination surface. The method also includes providing a horizontal solar cell comprising a layer of a second semiconductor layer deposited on the common, horizontal termination surface. The horizontal semiconductor layer has photovoltaic junctions either located at the common termination surface, or separating it into two horizontal sublayers, or both. The vertical and horizontal solar cells are so electrically interconnected that the output voltage of the hybrid cell is the sum of the output voltages of the two cells making it up. The material of the horizontal layer has a band gap different from that of the vertical semiconductor material bodies, and the solar cell with the widers band gap semiconductor material faces the sun. Structures of hybrid solar cells are also disclosed.
申请公布号 US4297717(A) 申请公布日期 1981.10.27
申请号 US19790069298 申请日期 1979.08.24
申请人 LI, CHOU H. 发明人 LI, CHOU H.
分类号 C30B21/02;C30B21/04;H01L21/24;H01L21/76;H01L21/761;H01L21/762;H01L21/763;H01L21/764;H01L27/142;H01L27/144;H01L27/15;H01L29/04;H01L29/06;H01L31/036;H01L31/068;H01L31/078;H01L31/18;H01L33/18;(IPC1-7):H01L29/64 主分类号 C30B21/02
代理机构 代理人
主权项
地址