发明名称 |
SEMICONDUCTOR ELEMENT CAPABLE OF WITHSTANDING HIGH VOLTAGE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>SEMICONDUCTOR ELEMENT CAPABLE OF WITHSTANDING HIGH VOLTAGE AND METHOD OF MANUFACTURING THE SAME A semiconductor element such as a thyristor or a transistor which is capable of withstanding a high voltage comprises a semiconductor substrate of a pnpn-four layer structure (for a thyristor) or of a npn-three layer structure (for a transistor). An intermediate p-type layer is composed of a low concentration layer region located adjacent to an n-type layer and a high concentration layer region located adjacent to the other n-type layer. The high concentration layer region is formed through diffusion of aluminium so that the maximum concentration thereof becomes at least equal to 5 x 1016 atoms/cm3. A method of manufacturing such semiconductor element is also disclosed.</p> |
申请公布号 |
CA1111571(A) |
申请公布日期 |
1981.10.27 |
申请号 |
CA19780295233 |
申请日期 |
1978.01.18 |
申请人 |
HITACHI, LTD. |
发明人 |
MOMMA, NAOHIRO;TANIGUCHI, HIROYUKI |
分类号 |
H01L29/73;H01L21/223;H01L21/331;H01L29/08;H01L29/10;H01L29/36;H01L29/74;H01L29/861;(IPC1-7):01L29/00 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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