| 摘要 |
PURPOSE:To arrange so that superior radiating property may be obtained under a state where high electric insulation property is maintained between a semiconductor chip and a substrate for its heat sink, etc. by using a BeO film as an insulation film. CONSTITUTION:A crystalline BeO film 41 is adhered at the lower surface of a semiconductor chip 1 having a semiconductor element built in. On the lower surface of this film 41, for instance, aluminum is evaporated as a heat sink 51 and is bonded to a header. Under this constitution, heat generated at the chip 1 is transmitted to the header through the film 41 and the heat sink 51 and then is radiated. Preferable a BeO film having C axis orientation is used as the film 41. In the BeO film, heat conductivity along the C axis is approximately 4.3 times larger than that in a vertical direction with C axis. Consequently, if the BeO film is adhered in such manner that it is oriented toward C axis, it is possible to further improve the radiating effect. |
