| 摘要 |
PURPOSE:To exptaxially form a compound semiconductor on a prearranged semiconductor by introducing more than one element into a reaction system in the form of gas molecule and introducing the other constituent elements in the form of an organic metallic compound. CONSTITUTION:More than one element of the V group and the VI group such as P, As, Sb, Te, etc. are combined and caused to react with an organic compound of the II-VI group such as Zn, Cd, Al, Ga, Sn, etc. (triethyl gallium, trimethyl aluminium, etc.). Then crystal substances such as GaAs, AlAs, GaAs, InAs, etc. are obtained. In addition, if a hydrogen compound is combined with dangerous S, Te, Se and diethylzinc, diethylcadmium, tetraethyl tin, tetraethyl lead, it is possible to form crystals such as ZnTe, ZnSe, PbSe, etc. Through the combination of the afore- mentioned raw material components in a variegated manner, crystal substances of plural compounds such as AlGaAs, InGaP, etc. |
