| 摘要 |
PURPOSE:To lay fine wiring without any adverse effect on the properties of an element by providing a phosphor getter through the building of a glass layer and utilizing a leftover glass layer as a liftoff spacer when wiring is formed by means of liftoff. CONSTITUTION:An opening 11 is provided in a silicon dioxide film 110 on a silicon substrate where a diffusion layer is formed as prearranged and a silicon dioxide 112 and PSG 113 with no impurities added are overlapped. Then P getter is applied in POCl3 at high temperature. Then PSG113' at high concentration is etched out, so that the rediffusion of an alkali metal subjected to getter application process is prevented. Following this procedure, a resist mask 114 is applied to provide an opening 115 in PSG113 by combined means of aerotropic and isotropic etchings. After this step, an aluminum and silicon alloy 116 is provided through vacuum evaporation so that a stepped cut is assured. If the resist 114 is removed, wiring 117-119 are completed resulting in the creation of the second aluminium wiring 121 through an interlayer insulation film 120. Under this constitution, the wiring 121 is formed on a flat surface, so that no wire cut is generated, less alloy fins are produced and no adverse effect is caused on properties. Thus a device of high density and high reliability can be obtained. |
