| 摘要 |
Excessive leakage after initial forward stress, exhibited by subsequently reverse stressed nitride defined, Schottky barrier diodes is solved by the elimination of the <<mouse hole>> or undercut cavity in the oxide layer (3) beneath the nitride ring (4) defining the Schottky contact to the underlying silicon. The aforementioned cavity is filled by depositing chemical vapor deposited (CVD) oxide (7) onto the nitride layer (4), into the nitride ring (4) and the undercut oxide cavity beneath the ring (4) and onto the underlying silicon substrate (1) exposed through the nitride ring (4). The CVD oxide (7) is then reactively ion etched to remove it except along the vertical walls of the nitride ring (4) and the oxide cavity. The Schottky metal (9) is deposited on the silicon substrate (1) exposed by the reactive ion etching step. |
