Plasma etching using improved electrode

摘要

Radio frequency plasma etching of conductive coatings on semiconductor slices is improved by the use of a curved electrode which is closer to the slice at the center than at the periphery. Preferably, the electrode is in a symmetrical chamber which contains only one slice, and reactant gases are admitted through apertures in the electrode. An r.f. power source is connected between the electrode and a holder for the slice.