| 发明名称 |
Method of treating SiPOS passivated high voltage semiconductor device |
| 摘要 |
The breakdown voltage of high voltage semiconductor devices passivated with SiPOS deteriorates if the devices are allowed to soak at temperatures in the 400 DEG C. to 525 DEG C. range. The original breakdown voltage is recovered by annealing the devices at a temperature of above about 550 DEG C. prior to metallization and alloying the metal at less than 425 DEG C.
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| 申请公布号 |
US4297149(A) |
申请公布日期 |
1981.10.27 |
| 申请号 |
US19800146380 |
申请日期 |
1980.05.05 |
| 申请人 |
RCA CORPORATION |
发明人 |
KOONS, PATRICK R.;NEILSON, JOHN M. S. |
| 分类号 |
H01L21/314;H01L21/3105;H01L21/324;(IPC1-7):H01L21/26;H01L21/20;G06F15/46 |
主分类号 |
H01L21/314 |
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代理人 |
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