摘要 |
PURPOSE:To enable attainment of high-speed operation and of leveling of a surface by constituting a gate electrode of single-crystal Si and by making the gate electrode and an impurity diffusion layer contact directly with each other. CONSTITUTION:Gate oxidation films 31 and 32 are embedded inside a p-type single-crystal Si substrate and thereon gate electrodes 28 and 29 formed of single-crystal Si are provided. Moreover, n<+> diffusion layers 22-24 are made adjacent to the films 31 and 32 and are arranged under the electrodes 28 and 29 and, in addition, the electrode 28 is made contact directly with the layer 24 serving both as a source and as a drain. Therefore, the resistance of the gate electrode can be made remarkably smaller than that of a gate electrode formed of polycrystalline Si, while the capacity between the gate electrode and the n<+> diffusion layers can be reduced, and further the ohmic connection between the electrode 28 and the layer 24 can be improved greatly. As the result, high-speed operation can be attained. In addition, since the surface of the substrate is leveled, disconnection of Al wirings 33-36 can be prevented. |