| 摘要 |
PURPOSE:To provide a high density arrangement of integrated circuits by embedding wiring of a field region in an insulation film and flattening a surface. CONSTITUTION:A silicon dioxide film 12 is overlaid on p type silicon substrate 11 and an opening is provided in a silicon tetrahidride 13 to etch a groove 14 of a prearranged depth. Then the silicon tetranitride 13 is selectively removed to provide an oxidation, so that a field oxidation film 15 is created. Because of this procedure, the groove width is reduced. Following this step, the films 13, 12 are removed and a gate oxidation film 16 is provided anew to build up n<+> type polysilicon 17. Next, the film is selectively removed to form a gate electrode 171 and a wiring layer 172. An opening is provided in the film 16, so that n<+> layers 18, 19 are created and these layers are coated by a silicon dioxide 20 with the creation of a window. Thus electrodes 21, 22 are formed completing an integrated circuit. On account of a flattened surface with a wiring layer 172 embedded, there is no step on the layer 20, enabling the availability of integrated circuits equipped with fine wiring free from breakdowns. |
