| 摘要 |
PURPOSE:To arrange so that a lead width and a lead-to-lead pitch may be reduced by forming the thickness of an inner lead smaller than that of an outer lead. CONSTITUTION:A high-density semiconductor element 7 is fixed inside a central concave part of a ceramic base 5 and a lead frame 9 is adhered through melting on the peripery of the base 3 using an adhesive 8. Wire 13 is bonded each between an inner lead 10 and an element electrode 12. The lead frame 9 and the inner lead 10 are formed in a monoblock as a single piece. When the leads 10, 11 are formed, the sheet thickness t1 of the lead 10 is formed in such manner that it is smaller than the sheet thickness to of the lead 11. Under this constitution, it is possible to make possible press processing or etching process in a delicate manner by virtue of reduced thickness. Thus the width of the lead 10 and a lead-to-lead pitch can be minimized. |
