| 摘要 |
PURPOSE:To contrive the improvement of characteristics and the elevation of a yield without requiring a heat treatment process for a long time at high temperature by a method wherein an impurity diffusion is made by utilizing a laser annealing. CONSTITUTION:A thermally oxidized film 12 is formed on a P type silicon semiconductor substrate 11, and the thermally oxidized film 12 is applied for patterning to form an opening. Then, a chemical gaseous growing method is applied to make a silicon semiconductor layer 13 grow at a low temperature. Subsequently, laser beams are radiated to fuse a part of the silicon semiconductor layer 13 and a part of the substrate under the layer 13 corresponding to the opening of the oxide film 12 and then hardened. When the fusion by the laser beams attains to a part of the substrate 11, P type impurities containing in the part are quickly diffused in to a monocrystalline silicon semiconductor part and form a P<-> type uniformly.
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