METHOD FOR MANUFACTURING SiC EPITAXIAL WAFER AND SiC EPITAXIAL GROWTH APPARATUS

摘要

A method for manufacturing a SiC epitaxial wafer according to an embodiment of the present invention comprises: separately introducing, into a reaction space for SiC epitaxial growth,a basic N-based gas that includes N atoms in the molecules and is composed of molecules which have neither double bonds nor triple bonds between the N atoms and a Cl-based gas composed of molecules that include Cl atoms in the molecules; and mixing the N-based gas and Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and Cl-based gas.