| 摘要 |
PURPOSE:To obtain the semiconductor integrated circuit for a temperature sensor which has little irregularity and is excellent in productivity by using a emitter-base junction as the temperature sensor and by connecting thereto a constant-current circuit of an insulated gate type transistor. CONSTITUTION:When the collector of a bipolar transistor and the base are connected, base-emitter current I turns to be the same in property with the voltage current of a diode and is changed according to temperature. A source of constant current is connected to the bipolar transistor and fixed current is made to flow therethrough to measure base-emitter voltage, whereby it can be used as the temperature sensor. As the source of constant current, a constant-current circuit constituted by an integrated circuit of complementary insulated gate field-effect type is used. The device can be manufactured in the same IC manufacturing process with that of other elements and thereby irregularity of characteristics can be reduced. |
