| 摘要 |
PURPOSE:To prevent an increase of a dark current and an interaction of electric signals between adjacent elements, to keep S/N high and to contrive an improvement of a resolving-power by a method wherein an ohmic contact layer is electrically divided between adjacent electrodes pair. CONSTITUTION:A unit electrode 2-2 is formed on a transparent glass substrate 2-1 and further, an N<+> layer 2-3 is piled on the unit electrode by a plasma depositioning method of SiH4 and PH3. Then, after a photoconductive layer 2-4 and N<+> layer 2-5 respectively are laminated by the plasma deposition of SiH4, SiH4 and PH3, Al layer 2-6 is attached by a vacuum evaporating method and unnecessary parts are removed by a photoetching to obtain the photoelectric conversion element. The N<+> layer is used for obtaining the ohmic contact of the electrode and the photoconductive layer and the Al layer acts as a common electrode. |
