| 摘要 |
PURPOSE:To provide minute multilayer wiring by providing grooves in a semiconductor layer or a metal layer film on a semiconductor substrate for oxidizing treatment and thereby filling up the grooves with the oxide of semiconductor or metal to facilitate the separation between elements and the formation of electrode wiring. CONSTITUTION:An Al film 104 and a silicon nitride film 105 are connected on to the substrate 101 having a silicon oxide film 103 selectively. The silicon nitride film and the Al film are etched sequentially by means of a resist pattern 106 and thereby the grooves are provided. When anode oxidation treatment is applied subsequently, the lateral surface of the Al film 104 is converted into alumina 111, which fills up the grooves through the change in volume. Then, the photoresist being removed, a nitride film 112 is connected, a conduction orifice 113 is provided, an Al layer 114 is further formed, and thus the multilayer wiring is formed. By this method, the separation between elements and the minute multilayer wiring can be effected with ease. |
