| 摘要 |
PURPOSE:To perform high integration of an element without deterioration of the property of the element by forming a thick insulating film and an inversion preventing layer in a field region by self-alignment without using a silicon nitride film. CONSTITUTION:An oxidized silicon film 2 is formed on the whole surface of a p type silicon substrate 1, followed by the formation of a polycrystalline silicon film 3 and a palladium film 4 thereon sequentially and later a resist film 5 is connected thereto. Next, by using the resist film 5 as a mask, the palladium film 4 is removed by etching and subsequently a p<+> layer 6 which is the inversion preventing layer is formed by injection of an ion. Then, the resist film 5 being removed, heat treatment is applied to make the palladium film 4 and the polycrystalline silicon film 3 react to eah other and thereafter a palladium silicide film thus formed is removed by etching. Next, after removing the oxidized silicon film through etching by using the polycrystalline silicon film as a mask, an MOS element is formed on the surface of the substrate thus exposed by an conventional method. |
