SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

摘要

According to a film forming method which cyclically supplies a first gas and a second gas, a by-product is generated by the first gas and the second gas, and reaction is hindered by the by-product. Since the by-product is generated by the reaction between the first gas and the second gas, the by-product decreases a remaining amount of at least one among the first gas and the second gas. The substrate processing apparatus according to the present invention comprises: a process chamber in which a substrate is processed; a substrate support unit which supports the substrate; a first gas supply unit which includes a first distributing unit for distributing the first gas; a second gas supply unit which includes a second distributing unit for distributing the second gas; and a distributing tube which penetrates within the first distributing unit to connect the process chamber with the second distributing unit, and supplies the second gas into the process chamber. An area of an inner surface of second distributing unit is smaller than a sum of an area of an inner surface of the first distributing unit and an area of an outer surface of the distributing tube.