| 摘要 |
<p>PURPOSE:To make a gate spacing sufficiently narrow without increasing a capacity by a method wherein a polycrystal is used for a main electrode region and insulating films on the top surface and the side surface of the polycrystal is used as masks for diffusing impurities for a gate formation. CONSTITUTION:An N<+>-source region 12, one of the main electrodes, is composed of a substrate or a burried layer and an N<->-region 13 which is made a channel region interposed between a drain N<->-polycrystalline layer 1, the other main electrode formed on the surface, and an N<+>-drain region 11. The N<+>-drain region 11 is surrounded by P<+> type regions 14 and 114 formed on the surface. A gate electrode 4 is contacted with the P<+>-gate region 14 in -shape and insulated on the top surface from the N<+>-polycrystalline layer 1 by the second insulating film such as SiO2 or Si3N4, and likewise insulated on the side surface by the third insulating film. In addition, the N<+>-polycrystalline layer 1 and the first P<+>-gate region 114 are insulated from each other by the first insulating film 7.</p> |
