| 摘要 |
PURPOSE:To improve integrity by a method wherein the depth of a guard region surrounding the source-drain region of a complementary IGFET is made to be the same with the depth of the source-drain region and the density of impurity in a guard region provided in a well is made low. CONSTITUTION:In the complementary IGFET wherein the 1st IGFET22 is provided on an N type Si substrate 20 and the 2nd IGFET23 within a P type well region 21, the N<+> type guard region 24 surrounding the source-drain region of the 1st IGFET and the P<+> type guard region 25 surrounding the source-drain region of the 2nd IGFET are formed respectively in the same depth with the source-drain regions, and, in addition, the density of impurity in the P<+> layer is made lower than the density of impurity in the N<+> layer. By this constitution, tunnel current of P-N junction on the boundary between the guard regions 24 and 25 can be made low and the width of the guard regions can also be made narrow, and therefore, the integrity is improved. |
