| 摘要 |
PURPOSE:To prolong a time of retention of a memory by a method wherein the distance between P-N junction generating a carrier flowing into a substrate due to the collision ionization of the integrated circuit including FET and adjacent P-N junction is made larger than an averaged free travel distance of the carrier. CONSTITUTION:In the semiconductor integrated circuit wherein source regions 203, 203' and drain regions 204, 204' are formed on a P type Si substrate 201 and a field oxidized film 205 provided with a channel stopper 206 is formed, the distance L between the P-N junction of a transistor which is to be a nodal point performing retention of a memory and the P-N junction having possibility to generate the carrier due to the collision ionization is arranged so as for it to be longer than the averaged free travel distance l of the carrier. Since the positive feedback that the gate voltage is lowered by the flowing-in of electrons to the nodal point of retention due to the collision ionization is not generated in this constitution, the time of retention of a memory is prolonged. |
