| 摘要 |
PURPOSE:To apply a fine process by a method wherein a predetermined mask is applied to a nitriding film of Mo or W to selectively separate N and made patterning after being converted to metal. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are formed on a P type Si substrate to allow MoN4 to be reservoired. When an Si3N4 mask 5 is applied and treated in H2 at 600 deg.C for about five minutes, the N of the MoN is separated to be changed to the metal Mo. Then, only Mo6 is selectively fused in a well-known Mo etching liquid, a gate electroe 4a of MoN is formed. Hereinafter, MOSFET is formed according to a general method. With this construction, the nitriding film of Mo or W can easily be wet-etching and applied the fine process. |
