| 摘要 |
PURPOSE:To keep a memory information in stable against a noise charge by alpha-rays due to a slight increase of area as a whole by a method wherein emitter layers are newly formed in a memory cell transistor to be connected to a collector layer. CONSTITUTION:A P base 3, P<+> ohmic base connecting layer 4, N<+> emitters 6, 7 and at the same time, 5a are formed in the N collector 2 in a P type substrate 1 and connected 9 with an N<+> ohmic collector connecting layer 5b. The emitter 5a produces a capacity CBE between the 5a and the base 3, and the capacity CBE is connected in parallel with CBC between the collector 2 and the base 3 to increase the capacity. The capacity per unit area is the largest between the base and emitter in high impurity density and a large effect is resulted by the capacity increase even the emitter 5a occupies a small area. In addition, capacity increase parts DELTACCE, DELTACBC due to the location of the emitter 5a are both made additional capacity increase parts of a collector node. The amounts of the electric charges stored at a stationary time are increased and the information is kept in stable against the noise charges by the alpha-rays, in the memory cell in which the transistor pair are connected as predetermined. |
