发明名称 PRODUCTION OF SEMICONDUCTOR
摘要 PURPOSE:To prevent cracking and disconnection in a wiring conductive film by making the surrounding wall of a contact hole like a staircase. CONSTITUTION:An insulator film 3 is formed on the surface of an n type substrate 1 provided with a p type diffused film 2. Then, with a resist mask 5, the insulator film 3 on an n type region is selectively etched to form a concave section 8 at a depth 1/2 of the film thickness for instance. After removal of the resist 5, a resist mask 9 is formed with a surrounding wall for a window 4a inside the surrounding wall of the concave section 8 and the insulator film 3 is etched to form a contact hole 11. After the removal of the resist 7, a wiring conductive film 12 is formed and connected to the surface of the p type diffused layer 2. In this contact hole 11, the step on the surrounding wall represents a staircase at a height almost 1/2 of the thickness of the insulator film 3, preventing cracking and disconnection in the wiring conductive film 12.
申请公布号 JPS56134733(A) 申请公布日期 1981.10.21
申请号 JP19800039791 申请日期 1980.03.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 ITOU KAZUO;DENDA MASAHIKO;TSUBOUCHI NATSUO;SATOU SHINICHI
分类号 H01L21/28;H01L21/768 主分类号 H01L21/28
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