| 摘要 |
PURPOSE:To obtain a stabilized constant current circuit by a method wherein a complementary IGFET is provided in an N type substrate and diodes in two P layers, and connected as predetermined. CONSTITUTION:A field oxide film 22 is formed on the N type Si substrate 8, the P layers 9-11 being formed, a gate oxide film 18 and a gate electrode 20 being formed to permit the P layers 14, 15 to be diffused and the first IGFET to be formed. A P well 9 is formed with a gate oxide film 19, a gate electrode 21 and an N layer being diffused to form the second IGFET. At the same time, N layers 12, 13 are formed in the P layers 12, 13 to form the diodes. Subsequently, the electrode 20 and the N layers 13, 17, and the electrode 21 and the N type substrate and also the P layer 10, and in addition, the P layer 11 and the N layer 12 are shortened respectively, and the N layer 16 is grounded. With this constitution, in the complementary IGFET circuit, the constant current source device remarkably stabilized against a fluctuation of the power source voltage can be realized and is most suitable for a portable unit. |
