Electrophotographic member.

摘要

An electrophotographic member has a support (1) and an amorphous silicon photoconductive layer (2). To achieve satisfactory resolution and good dark-decay characteristics, a region (22) of said layer (1) which is at least 10 nm thick and extends inwardly of the amorphous silicon layer from a surface of the layer (2) is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of a least 10<1><0> OMEGA .cm. Additionally to increase the sensitivity of the electrophotographic member to light of longer wavelengths, a region (23) which has an optical forbidden band gap narrower than that of the said surface region (22) is disposed within the amorphous silicon layer and has a thickness of at least 10 nm.