发明名称 |
Electrochemical eroding process for semiconductors. |
摘要 |
<p>Semiconductor devices (3) are fabricated that have precise uniform thickness regions formed by a self-limiting process in which light (5) generated hole-electron pairs are used as a source of current in electrochemical erosion. A self-aligned MESFET semiconductor structure (Figs. 1 and 4) has the gate (15) positioned in etched undercuts (13, 14) of the source and drain regions (9-12). Arrays of enhancement and depletion mode FET devices can be made on the same substrate.</p> |
申请公布号 |
EP0037876(A2) |
申请公布日期 |
1981.10.21 |
申请号 |
EP19810100814 |
申请日期 |
1981.02.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAPPELL, TERRY IVAN;PETTIT, GEORGE DAVID;WOODALL, JERRY MCPHERSON |
分类号 |
H01L29/80;C25F3/12;H01L21/306;H01L21/3063;H01L21/338;H01L29/812;(IPC1-7):01L21/306;01L29/80;01L21/80 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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