| 摘要 |
A semiconductor device structure and a forming method thereof are provided. A semiconductor device structure comprises a semiconductor substrate and a fin channel structure on the semiconductor substrate. The semiconductor device structure also comprises a gate stack covering a portion of the fin channel structure. The semiconductor device structure further comprises a source/drain structure adjacent to the fin channel structure and a doped region between the semiconductor substrate and the fin channel structure. In addition, the semiconductor device structure comprises a blocking layer between the fin channel structure and the doped region. |
