| 摘要 |
PURPOSE:To detect and store an optical signal data directly as an electrical signal by a method wherein insulated gate type field effect transistors each having a double dielectric gate insulating layer on one main surface of a semiconductor substrate are arranged one-dimensionally or two-dimensionally to form an optical data detector. CONSTITUTION:The surface of a metal-nitride-oxide-silicon-insulated gate type field effect transistor is coated with an Sb2S3 thin film 8 as a photoconductive substance, and moreover, the surface of the Sb2S3 thin film 8 is coated with an ITO thin film 9 which permits the passage of visible rays. The metal-nitride-oxide-silicon-insulated gate type field effect transistor having said structure has two states, the depletion type and the enhancement type, according to the existence of the irradiation of light, and a state once set is maintained until a voltage pulse is newly applied between an Al gate electrode 5 and an Si substrate 1. |
