| 摘要 |
PURPOSE:To reduce crosstalk by providing in a multilayer semiconductor substrate with the first conductivity type, a plurality of semiconductor regions with the second conductivity type piled one upon another being connected to each other through only a portion thereof. CONSTITUTION:P type impurity is diffused into a silicon substrate 1 to form a diffused layer 8 with the opposite conductivity type. Then, an epitaxial layer 9 is formed, and therein, a diffused layer 10 is formed so as to overlap with the regions 8 through only a portion thereof. Similarly, an epitaxial layer 11 is formed, and therein, a diffused layer 12 is formed. Then, epitaxial layers and diffused layers are successively formed, and only the portions where the layers 8, 10, 12... overlap with each other are allowed to conduct. |
