| 摘要 |
An initializing circuit and protection circuit for MOS integrated circuits which employ substrate biasing are disclosed. In one embodiment, a weak depletion mode transistor is coupled between a line in the integrated circuit and ground. The gate of this transistor receives the substrate biasing potential. Since this transistor is enabled without power applied to the circuit, when the circuit is powered-up, this transistor effectively shorts-out the line and prevents the transmission of stray signals. When the substrate biasing potential is reached, the transistor is disabled and effectively removed from the circuit. Once this occurs, normal transmissions on the line are possible.
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