| 摘要 |
PURPOSE:To improve the cross modulation characteristics, by applying reverse AGC to the second gate and by biasing the first gate by the divided voltage of the source voltage. CONSTITUTION:When the source voltage is divided by resistances R01 and R02 and is given to the first gate G1 of the MES type FET as the bias voltage, the output voltage is fluctuated according to fluctuation of the signal level input to the first gate G1, and the source current is fluctuated according to this fluctuation, and thus, the bias voltage of the first gate G1 is always kept in a fixed value or more. As a result, the cross modulation characteristics are improved while keeping the NF value well. |
