| 摘要 |
The present invention relates to an apparatus for producing a silicon ingot, in which a water cooling tube is extended long, thereby increasing a crystal growth rate. Provided is the apparatus for producing a silicon ingot, the apparatus comprising: a chamber; a crucible which is disposed inside the chamber so as to accommodate a silicon melt; a heater which heats the crucible so as to heat the silicon melt; a pulling device which is disposed inside the chamber so as to pull a silicon single crystal ingot growing from the silicon melt; a sensor which is disposed on one side of the chamber so as to determine a solid-fluid interface, i.e., a boundary layer between the silicon melt and the silicon single crystal ingot; and a cooling device which is disposed around the silicon single crystal ingot so as to cool the silicon single crystal ingot; wherein the cooling device is configured such that an end of the cooling device is extended below a sensing path of the sensor so that a crystal growth rate can be increased by rapidly removing heat of the silicon single crystal ingot, and a sensing path hole is formed not to hide the sensing path. |
