| 摘要 |
PURPOSE:To obtain short-channel MIC device without the increase of leak by preventing short-channel effect, controlling the collision of ions, by a method wherein the alighment of gate, N layer of the gate edge and the following N layer are performed easily and finely. CONSTITUTION:Coating conductivity poly Si4 on P type Si insulating separation layer 2 and SiO2 thin film 3, removing selectively with Si3N4 mask 5, SiO2 7 is formed at the end face. Taking the mask 5 off and providing N layers 8, 9, by ion implantation using films 4 and 7 as masks and performing heat-treatment, N<-> layer 10 is diffusion formed direct downward from the layer 7 and the drain 11, source 9 are completed. Thereafter, removing SiO2 7, covering with PSG 12 as required, electrode 13-15 are formed. In this composition, by adding voltage to the drain, depletion layer width expands so much as the width of depletion layer 17 expands to N<-> layer 10 side, and collisions of ions are suppressed while leakage increase or withstanding voltage decrease can be prevented thereby MIS device with fine pattern short channel can be obtained. |
