| 摘要 |
PURPOSE:To enable forming of metallic film pattern with ultra-thin 2-layer structure by using the notable difference in etching speed between the Al film accumulated near the step and other Al coated parts. CONSTITUTION:After forming an SiO2 film 3 and a contact hole 4 on an Si substrate 2 with a diffusion layer 1, a steep step 6 is formed on the film using a resist 5. The thin polycrystal line film 7 is accumulated on substrate 2 covering the step 6. Then, Al film 8 is accumulated all over. The part of Al film 8a near the step 6 will be of considerably low density and quality, compared with other parts of Al film. Then, by etching the whole film, the part of the film 8a near the step 6 is preferentially and locally removed by a small width, thus forming Al pattern 9. Then the film 7 is etched using the pattern 9 as a mask, and polycrystalline Si pattern 10 is formed. Thus, from pattern 9 and 10, ultra- thin metallic film pattern 10 is formed. |
