| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor crystal for a radiation detection element from which a substrate for a radiation detection element maintaining a high energy resolution, can be cut out.SOLUTION: There is provided a method for producing a compound semiconductor crystal for a radiation detection element having a high energy resolution, in which indium is added as an impurity, the compound semiconductor crystal formed of cadmium zinc telluride whose composition is represented by CdZnTe(X=0.02 to 0.10) is heat-treated at a first heat treatment temperature lower than a temperature when the crystal growth of a compound semiconductor ends, after then, the compound semiconductor crystal is heat-treated at a second heat treatment temperature (200 to 420°C) lower than the first heat treatment temperature for 24 to 96 hours, and a half-value width H of the peak measured from a radiation spectrum of cobalt (Co-57) when a bias voltage of 250 V is applied, is small. A device produces the crystal in which the added indium is preferably 0.2 to 2.6 wt.%, and the composition is represented by CdZnTe, in which X is preferably 0.02 to 0.1.SELECTED DRAWING: Figure 6 |
