| 摘要 |
PURPOSE:To resolve and remove slugs caused in the former step and prevent melt- back of the grown layer, by bringing, after the last layer is grown, the substrate into contact with melted liquid with similar composition to the melted liquid material. CONSTITUTION:A GaAs substrate 3 is set on a lower boat 1. In cisterns for melted liquid of the upper boat Ga 4 containing growth materials Al and As, and Ga 5 containing only As and not Al meant for cleaning liquid are respectively stored. In this unit for growth, the first slide of the boat performs an epitaxial growth by melted liquid 4. The second slide removes melted liquid 4 from the substrate. Thereafter melted liquid 5 passes on the substrate 3. Al, a component element for the growth layer, forms oxide, which turns to slugs and attaches to the surface of the growth layer. But the slugs are quickly removed by the contact with melted liquid 5. On the other hand, melt-back of the growth layer hardly takes place because Ga in melted liquid 5 is saturated by As. |
