| 摘要 |
Fabrication of microminiature devices, such as integrated circuit utilizing the delineation of fine-line patterns in such devices by dry etching processes. By utilizing a fluorine-containing gaseous compound in a plasma etching process, isotropic etching of doped or undoped monocrystalline silicone (48) and polycrystalline silicon (54) is achieved. The etching processes are substantially free of any proximity effects and are characterized by a high etching rate at relatively low power levels, high selectivity (with respect to, for example, silicon dioxide) and excellent uniformity. By mixing other gases (for example, chlorine) with the fluorine-containing gas the amount of undercutting achieved during the etching process can be selectively controlled. |
