发明名称 METHOD OF ELECTRON BEAM EXPOSURE
摘要 PURPOSE:To sharply shorten the time needed for exposure by determining the amount and direction of stage movement and the width and direction of electron beam deflection, by twice stage movements. CONSTITUTION:The stage 8 is moved twice so that the mark on the first field of a chip on a wafer W is positioned at the right-lower side and the left-upper side of the deflection field, and the amount of stage movement and the coordinates attained by beam scanning of the mark are measured by an arithmetic circuit (inside CPU5). The conversion coefficient between the stage system and the field system is calculated from the results of measurement by this circuit. And also, the amount of stage movement in X and Y direction is calculated from coordinates of other marks in this field. Also, the width and direction of electron beam deflection are calculated. From results of these calculations, required pattern is drawn in the first field controlled by orders from CPU5. Hereon, drawings are made in the same way.
申请公布号 JPS56131928(A) 申请公布日期 1981.10.15
申请号 JP19800035048 申请日期 1980.03.19
申请人 NIPPON ELECTRON OPTICS LAB 发明人 YUASA TETSUO;TAKEMURA HITOSHI
分类号 H01L21/027;H01J37/304 主分类号 H01L21/027
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