| 摘要 |
PURPOSE:To take out light emission from a sapphire substrate by providing an inverted truncated pyramid type cavity on a sapphire substrate and installing MIS- structured GaNLED chip. CONSTITUTION:An inverted truncated pyramid type cavity is provided on a ceramic substrate and a gold film 10 is attached on an inclined surface and an independent gold film 11 at the center of the bottom, and leads 12, 13 are attached to the former respectively. An electrode 4 on a GaN chip 7 is installed facing against the Au film 11 through In 15, and In line 16 is inserted into a clearance between the Au film 10 on an inclined surface and the side of a chip. When the In is melted and solidified, the Au film 11 and the electrode 4 are connected, and the Au film 10 and the first GaN layer 2 of the chip are connected together to prevent a molten In from flowing down from a V-shaped clearance and short-circuit the films 10 and 11. Under this constitution, it is possible to take out GaN light emission from the sapphire substrate. The light emission is not intercepted at all because sapphire allows the through penetration of blue color. |
