| 摘要 |
PURPOSE:To obtain high tension resistant complementary device by using areas with depression layer of two kinds of elements as N<-> substrate, and forming one element with PN<->N<+> structure and the other N<->P structure. CONSTITUTION:Trapezoidal regions 22 and 23 are formed by antithotropic etching the (100) faces of N<->Si substrate 21, and N<+> layer 24 and P<+> layer 25 are selectively formed on the surface. It is covered with SiO2 film 26 and poly Si 27 is accumulated. The back surface of substrate 21 is abraded to expose the sole of the trapezoid. P base 31, N emitter 32 and N<+> collector leading out layer 35 are set to the insular region 29 to compose NPN<-> transistor, and P emitter 35 and P<+> collector leading out layer 36 are set on the surface of N base 34 to compose PN<->P<+> transistor. As this structure enables controlling concentration and thickness of impurity of N layers 22' and 23' which have large depression layer, complementary device with required high tension resistance can be obtained. |
