| 摘要 |
PURPOSE:To obtain good crystal characteristics by exercising semiconductor crystal laser anneal with at least one of the crystal component elements at high vapor pressure. CONSTITUTION:A GaAS substrate 5 is set to a substrate holder 6 which has a cooling device 8. Then, the flow rate of AsH3 is controlled by a flowmeter 11 through a cock 10 from AsH3 cylinder 9. Then, laser 1 is irradiated selectively to required parts. By this way, exhalation and evaporation of As during laser annealing can be prevented, without setting passivation film on the surface of substrate 5. Thus, activation rate is improved and dispersion decreased. Mobility is also improved and state of the surface is kept in specular state. |
