Resistive switching memory device architecture for reduced cell damage during processing

摘要

In one embodiment, a resistive switching memory device can include: (i) a plurality of resistive memory cells arranged in a plurality of array blocks, where each resistive memory cell is configured to be programmed to a low resistance state by application of a program voltage in a forward bias direction, and to be erased to a high resistance state by application of an erase voltage in a reverse bias direction; (ii) a plurality of anode plates corresponding to the plurality of array blocks, where each resistive memory cell can include a resistive storage element having an anode coupled to one of the anode plates; (iii) an inactive ring surrounding the plurality of anode plates, where the inactive ring can include a same material as each of the plurality of anode plates; and (iv) a plurality of boundary cells located under the inactive ring.

主权项

1. A method of making a resistive switching memory device, the method comprising:
a) forming a plurality of resistive memory cells arranged in a plurality of array blocks, wherein each resistive memory cell is configured to be programmed to a low resistance state by application of a program voltage in a forward bias direction, and to be erased to a high resistance state by application of an erase voltage in a reverse bias direction; b) forming a plurality of anode plates corresponding to the plurality of array blocks, wherein each resistive memory cell comprises a resistive storage element having an anode coupled to one of the anode plates; c) forming an inactive ring surrounding the plurality of anode plates, wherein the inactive ring comprises a same material as each of the plurality of anode plates; and d) forming a plurality of boundary cells located under the inactive ring.