| 摘要 |
PURPOSE:To prevent the parasitic channel, the disconnection of a wire and enhance the integration of an IC by covering an insulating film on a substrate having two exposed surfaces, forming a semiconductor element region for one and a wiring region for the other, and wiring via the second insulating film. CONSTITUTION:An SiO2 film 2 is covered selectively on an N<+> type semiconductor substrate 1, and N type semiconductor layer 3 is formed on the two exposed surfaces. A P type impurity is diffused in the one semiconductor layer to form a source 4 and a drain 5, and a wiring region 6 is formed on the other semiconductor layer. Subsequently, phosphorus-doped the second SiO2 film 9 is formed thereon, a through hole is perforated thereat, metal is evaporated thereon as an electrode wire 10, and an MISFET IC is thus formed. Thus, it can prevent the production of a parasitic channel, the disconnection of an electrode wire, and an IC having high integration can be obtained. |
