| 摘要 |
PURPOSE:To smooth the steps of an etching pattern by forming the second film having an etching rate larger than the first film and the first film on a substrate and plasma etching the first and the second films with a resist pattern as a mask. CONSTITUTION:The first film 3 made of polysilicon and the second film 7 made of Mo or the like having a plasma etching rate faster than the film 3 are sequentially laminated on a semiconductor substrate 1 having an insulating film 2, and with a resist pattern 4' as a mask it is plasma etched in CF4 atmosphere to form an etching pattern made of polysilicon. Thus, the step B' of the etching pattern is smoothed with high accuracy, and accordingly the improper disconnection of a metallic wiring layer can be reduced. |
