| 摘要 |
PURPOSE:To achieve high density, by alternately locating the sense amplifier to the end of direction with difference of parallel data lines. CONSTITUTION:The memory cell 11 is located at the cross point among the address lines W1-W6 and data lines D1,D1',-, D4, D4'. Further, input is fed from the line pairs D1D1',-D4D4' to the sense amplifiers SA1-SA4. In this case, the amplifiers SA1-SA4 are located to the end different for the cell matrix alternately. Thus, the number of the sense amplifiers at the same end can be halved. |
