POWER SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE HAVING LONGITUDINAL AXIS INCLINING WITH RESPECT TO MAIN CRYSTAL DIRECTION

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device (500) including a semiconductor body (100) having a first main crystal direction (401) parallel with the horizontal plane.SOLUTION: The longitudinal axis (159) of a trench gate structure (150) is inclining in the horizontal plane by an inclination angle φ of 2°-30°, with respect to the first main crystal direction (401). Between adjoining trench gate structures (150), a mesa (170) is provided. The first sidewall section (104a) of the first mesa sidewall (104) is a main crystal surface parallel with the first main crystal direction (401). By means of a second sidewall section (104b) inclining with respect to the first sidewall section (104a), a plurality of first sidewall sections (104a) are connected.SELECTED DRAWING: Figure 6A