| 摘要 |
PURPOSE:To prevent the effect of a hot carrier when a short channel effect preventing remedy is employed by forming a thick gate oxide film end corresponding to the channel side end of a drain region, thereby shortening the channel of an MIS field effect transistor. CONSTITUTION:A field oxide film 6 and a gate oxide film 7 are formed on a P type silicon semiconductor substrate 1, and a polycrystalline silicon film 8 and a silicon nitride film 9 are further formed thereon. The part 7a corresponding to the channel side end of the drain region of a gate oxide film 7 is formed thickly. Subsequently, a silicon gate electrode 8G is formed, and the film 7 is patterned. Then, an n<+> type source region 10S and an n<+> type drain region 10D are formed by ion injection. Thereafter, a phosphosilicate glass film 11, a source electrode 12S, a gate electrode 12G and a drain electrode 12D are formed thereon. |
