| 摘要 |
PURPOSE:To enhance the reliability of a semiconductor device and to improve the productivity thereof by forming a gate electrode plate of low resistance making contact with a gate electrode, integrating the gate electrode plate and the cathode electrode via an insulator and confronting it with a semiconductor substrate. CONSTITUTION:An electrode plate 100 is formed by integrating a cathode electrode plate 101 in which a load current flows in contact with a cathode electrode 6 with a gate ring 102 in which a gate current flows in contact with a gate electrode 7'. A low heat expansion coefficient glass 103 is filled between the electrode plates 101 and 102. The plate 100 and the substrate 1 are pressurized and contacted, and contacted at the n type emitter 5 and the projection 40 of a p type base. |
